We present a comparative study of electroluminescence from Au/extra thin nanosize Ge particles embedded silicon oxide film/p-Si structures and that from Au/extra thin nanosize Si particles embedded silicon oxide film/p-Si structures. Annealed at a series of temperatures, the two types of structures have strikingly similar electroluminescence spectra at each of annealing temperature, and each of the spectra has a peak around 640 nm and a shoulder around 510 nm. Such striking similarities can be reasonably interpreted if the origin of electroluminescence is attributed to the luminescence centers in the silicon oxide films rather than to nanosize Ge particles or nanosize Si particles.Physics, AppliedPhysics, Condensed MatterSCI(E)CPCI-S(ISTP)
The electroluminescence (EL) at room temperature from Au-extra-thin silicon oxynitride (ETSON)-p-Si ...
photoluminescence, nanoclusters, erbium, Transmission electron microscopyWe have studied the 1.5 µm ...
Using a Ge-SiO2(GSO) composite target with the Ge wafer in the target having percentage areas of 0%,...
In order to determine if electroluminescence(EL) of metal/nanosize Si particle embedded dielectric f...
The structures of Au/Si-rich SO2/p-Si and Au/Si-rich SiO2/n+-Si have been fabricated and their elect...
Visible electroluminescence (EL) has been reported from semitransparent Au film/extra thin Si-rich s...
Nanoscale Ge/nanoscale SiO2 superlattices (SLs) with four periods have been grown using the two-elec...
Nanometer Ge particle (NGP) embedded Si oxide films were deposited on p-type Si substrates using the...
Electroluminescent devices were fabricated in SiO_2 films containing Ge nanocrystals formed by ion i...
Photoluminescence (PL) at 1.54 µm from erbium is studied in two systems containing silicon clusters....
Electroluminescence (EL) is observed from the Au/Si-rich SiO2 film/p-Si diodes, in which the Si-rich...
Blue, green, yellow and red electroluminescence (EL) from the semitransparent Au/native silicon oxid...
Sandwich structures composed of metal and Si external layers with an intermediate embedded nanosize-...
Visible light emission can be observed from alternation-magnetron-sputtered Si/SiO2 superlattices (S...
Electroluminescence (EL) from an Au/native silicon oxide layer (NSOL)/p(+)-Si structure and an Au/NS...
The electroluminescence (EL) at room temperature from Au-extra-thin silicon oxynitride (ETSON)-p-Si ...
photoluminescence, nanoclusters, erbium, Transmission electron microscopyWe have studied the 1.5 µm ...
Using a Ge-SiO2(GSO) composite target with the Ge wafer in the target having percentage areas of 0%,...
In order to determine if electroluminescence(EL) of metal/nanosize Si particle embedded dielectric f...
The structures of Au/Si-rich SO2/p-Si and Au/Si-rich SiO2/n+-Si have been fabricated and their elect...
Visible electroluminescence (EL) has been reported from semitransparent Au film/extra thin Si-rich s...
Nanoscale Ge/nanoscale SiO2 superlattices (SLs) with four periods have been grown using the two-elec...
Nanometer Ge particle (NGP) embedded Si oxide films were deposited on p-type Si substrates using the...
Electroluminescent devices were fabricated in SiO_2 films containing Ge nanocrystals formed by ion i...
Photoluminescence (PL) at 1.54 µm from erbium is studied in two systems containing silicon clusters....
Electroluminescence (EL) is observed from the Au/Si-rich SiO2 film/p-Si diodes, in which the Si-rich...
Blue, green, yellow and red electroluminescence (EL) from the semitransparent Au/native silicon oxid...
Sandwich structures composed of metal and Si external layers with an intermediate embedded nanosize-...
Visible light emission can be observed from alternation-magnetron-sputtered Si/SiO2 superlattices (S...
Electroluminescence (EL) from an Au/native silicon oxide layer (NSOL)/p(+)-Si structure and an Au/NS...
The electroluminescence (EL) at room temperature from Au-extra-thin silicon oxynitride (ETSON)-p-Si ...
photoluminescence, nanoclusters, erbium, Transmission electron microscopyWe have studied the 1.5 µm ...
Using a Ge-SiO2(GSO) composite target with the Ge wafer in the target having percentage areas of 0%,...