Operation-oriented solution to boost key performance of RRAM
- Chen, B.
- Gao, B.
- Sheng, S.W.
- Liu, L.F.
- Liu, X.Y.
- Chen, Y.S.
- Wang, Y.
- Kang, J.F.
- Yu, B.
Publication date
January 2010
DOIAbstract
Based on the new finding on switching behavior, for the first time a new memory operation principle is proposed to control the switching and to achieve improved performance of oxide-based RRAM including device-to-device and cycle-to-cycle uniformity, RESET current, and window of RHRS/RLRS ratio. Furthermore, a numerical simulation method is developed to evaluate the validity of the new operation principle in scaled RRAM devices.EI
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