Efficient simulations of ion implantation are very important to ultra shallow junction technology. In this paper, a new splitting method is developed, based on the quantitative description and sensitivity analysis of statistical noise. A series of formulas are deduced and some disadvantages of existing splitting methods are pointed out.EI
Analytical methods for the description of ion implantation show good agreement with experiment and M...
Two methods are described for improving the results of a Monte Carlo technique used to simulate the ...
textA physically-based model for ion implantation of any species into single crystal silicon and a ...
A novel splitting algorithm called MC-AIPA is proposed for MC (Monte Carlo) ion implantation simulat...
Three trajectory split methods [I] for the acceleration of two and three-dimen-sional Monte Carlo si...
A new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation...
The effect of dose on range profiles of medium and low energy ion implantation used in formation of ...
A new method for the acceleration of MD (molecular dynamics) simulation of ion implantation into cry...
The high accuracy which is necessary for modern process simulation often requires the use of Monte-C...
In this paper, a new method for an accurate and time efficient 3D simulation of ion implantation and...
A new method for the acceleration of MD (molecular dynamics) simulation of ion implantation into cry...
has proved to be a very accurate tool for simulation of various implantation processes. In this pape...
Ion implantation is the most important doping technique for VLSI circuits. In this contribution, mod...
[[abstract]]Ion implantation is a standart doping technique for semiconductor material. For shallow ...
We have developed a reliable and efficient molecular dynamics program LEACS to simulate the low ener...
Analytical methods for the description of ion implantation show good agreement with experiment and M...
Two methods are described for improving the results of a Monte Carlo technique used to simulate the ...
textA physically-based model for ion implantation of any species into single crystal silicon and a ...
A novel splitting algorithm called MC-AIPA is proposed for MC (Monte Carlo) ion implantation simulat...
Three trajectory split methods [I] for the acceleration of two and three-dimen-sional Monte Carlo si...
A new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation...
The effect of dose on range profiles of medium and low energy ion implantation used in formation of ...
A new method for the acceleration of MD (molecular dynamics) simulation of ion implantation into cry...
The high accuracy which is necessary for modern process simulation often requires the use of Monte-C...
In this paper, a new method for an accurate and time efficient 3D simulation of ion implantation and...
A new method for the acceleration of MD (molecular dynamics) simulation of ion implantation into cry...
has proved to be a very accurate tool for simulation of various implantation processes. In this pape...
Ion implantation is the most important doping technique for VLSI circuits. In this contribution, mod...
[[abstract]]Ion implantation is a standart doping technique for semiconductor material. For shallow ...
We have developed a reliable and efficient molecular dynamics program LEACS to simulate the low ener...
Analytical methods for the description of ion implantation show good agreement with experiment and M...
Two methods are described for improving the results of a Monte Carlo technique used to simulate the ...
textA physically-based model for ion implantation of any species into single crystal silicon and a ...
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