Add to ORKGA novel n-channel Schottky barrier MOSFET with dual-layer silicide source/drain (DS-SB-MOSFET) has been proposed for nanoscale application. In this device, the stacked source and drain of SB-MOSFET are composed with two metal silicide layers. The Schottky barrier height of the top silicide/channel contact is lower than that of the bottom silicide/channel contact. The low Schottky barrier height of top silicide/channel contact near the gate oxide improves the electron injection capability in on-state. And the high Schottky barrier height of the bottom silicide/channel contact below the top silicide layer reduces the leakage current in off-state. Simulations indicated that the performance of DS-SB-MOSFET has been significantly improved, compa...
As the device size shrinks continuously by scaling in the current Si CMOS technology, the drain indu...
We present experimental results on silicon-on-insulator Schottky-barrier MOSFETs with fully silicide...
The development of nanoscale MOSFETs has given rise to increased attention paid to the role of paras...
A novel n-channel Schottky barrier MOSFET with dual-layer silicide source/drain (DS-SB-MOSFET) has b...
In this paper, we propose a novel Schottky barrier MOSFET structure, in which the silicide source/dr...
A novel structure of Schottky Barrier MOSFET is demonstrated. The devices are designed upon the conc...
The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-sem...
In this paper. we present a detailed study of nickel-silicide source and drain Schottky barrier MOSF...
As continued MOSFETs scaling becomes increasingly challenging, solutions are urgently needed to meet...
The continuous downscaling of the Si-based microelectronics, which is the fundament of today’s infor...
Silicon nanowire with Gate-All-Around architecture is considered as one of the most promising candid...
An n-channel planar asymmetric Schottky barrier source/drain MOSFET (ASB), in which the source-side ...
We have fabricated silicon nanowire N-MOSFETs using erbium disilicide (ErSi2−x) in a Schottky source...
We study here, using non-equilibrium Green’s function quantum simulations, the impact of dopant segr...
In this paper, we have proposed and simulated one novel Schottky barrier germanium-based MOSFET stru...
As the device size shrinks continuously by scaling in the current Si CMOS technology, the drain indu...
We present experimental results on silicon-on-insulator Schottky-barrier MOSFETs with fully silicide...
The development of nanoscale MOSFETs has given rise to increased attention paid to the role of paras...
A novel n-channel Schottky barrier MOSFET with dual-layer silicide source/drain (DS-SB-MOSFET) has b...
In this paper, we propose a novel Schottky barrier MOSFET structure, in which the silicide source/dr...
A novel structure of Schottky Barrier MOSFET is demonstrated. The devices are designed upon the conc...
The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-sem...
In this paper. we present a detailed study of nickel-silicide source and drain Schottky barrier MOSF...
As continued MOSFETs scaling becomes increasingly challenging, solutions are urgently needed to meet...
The continuous downscaling of the Si-based microelectronics, which is the fundament of today’s infor...
Silicon nanowire with Gate-All-Around architecture is considered as one of the most promising candid...
An n-channel planar asymmetric Schottky barrier source/drain MOSFET (ASB), in which the source-side ...
We have fabricated silicon nanowire N-MOSFETs using erbium disilicide (ErSi2−x) in a Schottky source...
We study here, using non-equilibrium Green’s function quantum simulations, the impact of dopant segr...
In this paper, we have proposed and simulated one novel Schottky barrier germanium-based MOSFET stru...
As the device size shrinks continuously by scaling in the current Si CMOS technology, the drain indu...
We present experimental results on silicon-on-insulator Schottky-barrier MOSFETs with fully silicide...
The development of nanoscale MOSFETs has given rise to increased attention paid to the role of paras...