Threshold switching uniformity in In2Se3 nanowire-based phase change memory

The uniformity of threshold voltage and threshold current in the In2Se3 nanowire-based phase change memory (PCM) devices is investigated. Based on the trap-limited transport model, amorphous layer thickness, trap density, and trap depth are considered to clarify their influences upon the threshold voltage and threshold current through simulations. ? 2015 Chinese Physical Society and IOP Publishing Ltd.SCI(E)EI中国科技核心期刊(ISTIC)中国科学引文数据库(CSCD)0ARTICLExyliu@ime.pku.edu.cn52