Add to ORKGMolecular Dynamic (MD) approach has been recognized as precise simulation method for low energy ion implantation. Impact of interact potentials applied in MD method on precise simulation is investigated in this paper. Born-Mayer potential is applied to ion implantation simulation here. The comparison between Born-Mayer and ZBL potential is performed. B, P, As, implantation at around IKev are simulated and compared with Second Ion Mass Spectrum (SIMS) data. Simulations results show that with Born Mayer potential more accurate simulation results can be achieved for ultra-low energy implantation.EI
Traditional Monte Carlo ion implantation simulator TSUPREM4 is used to investigate ion implantation ...
We have studied the implantation of boron and arsenic ions into silicon by classical molecular dynam...
Classical molecular dynamics simulations are used to study damage produced during implantation of se...
We have developed a reliable and efficient molecular dynamics program LEACS to simulate the low ener...
The effect of dose on range profiles of medium and low energy ion implantation used in formation of ...
A new method for the acceleration of MD (molecular dynamics) simulation of ion implantation into cry...
10.1016/j.nimb.2004.10.051Nuclear Instruments and Methods in Physics Research, Section B: Beam Inter...
A new damage model for ion implantation simulation based on molecular dynamic method is introduced i...
10.1116/1.2137333Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structur...
Using binomial distribution, we have created a structure to describe Si1-xGex substrate, so ion impl...
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and...
A new method for the acceleration of MD (molecular dynamics) simulation of ion implantation into cry...
In this paper, a new method for an accurate and time efficient 3D simulation of ion implantation and...
Molecular dynamics (MD) method has not been reported to predict range profiles of implantation into ...
A new damage model for ion implantation simulation based on molecular dynamic method is introduced i...
Traditional Monte Carlo ion implantation simulator TSUPREM4 is used to investigate ion implantation ...
We have studied the implantation of boron and arsenic ions into silicon by classical molecular dynam...
Classical molecular dynamics simulations are used to study damage produced during implantation of se...
We have developed a reliable and efficient molecular dynamics program LEACS to simulate the low ener...
The effect of dose on range profiles of medium and low energy ion implantation used in formation of ...
A new method for the acceleration of MD (molecular dynamics) simulation of ion implantation into cry...
10.1016/j.nimb.2004.10.051Nuclear Instruments and Methods in Physics Research, Section B: Beam Inter...
A new damage model for ion implantation simulation based on molecular dynamic method is introduced i...
10.1116/1.2137333Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structur...
Using binomial distribution, we have created a structure to describe Si1-xGex substrate, so ion impl...
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and...
A new method for the acceleration of MD (molecular dynamics) simulation of ion implantation into cry...
In this paper, a new method for an accurate and time efficient 3D simulation of ion implantation and...
Molecular dynamics (MD) method has not been reported to predict range profiles of implantation into ...
A new damage model for ion implantation simulation based on molecular dynamic method is introduced i...
Traditional Monte Carlo ion implantation simulator TSUPREM4 is used to investigate ion implantation ...
We have studied the implantation of boron and arsenic ions into silicon by classical molecular dynam...
Classical molecular dynamics simulations are used to study damage produced during implantation of se...