In this paper, a new robust measureement method and setup on the 1/f noise of wafer level is developed. The developed test setup was constructed of the Keithley series of instruments including Keithley Instrument 4200-SCS, Keithley Instrument 428 and a low pass filter. A Keithley software of Automation Characterization Suite (ACS) was applied to control the operation of measurement instruments and to acquire/analyze the measured data. Since the adopted low pass filter can remove any higher frequency noises than 0.5 Hz, the measurement accuracy on the 1/f noise is significantly improved. Using the setup, the 1/f noise characteristics of NMOS and PMOS devices with different sizes under different bias conditions can be evaluated.EI
This thesis develops a systematic framework for the flicker noise measurement, characterization and ...
This thesis develops a systematic framework for the flicker noise measurement, characterization and ...
A new measurement setup is presented that allows the observation of 1/f noise spectra in MOSFET's un...
3)Laboratoire d’Electronique et de Technologie de l’Information, CEA Grenoble, France. Abstract − A ...
This work demonstrates a low frequency noise measurement technique and setup that is suitable for hi...
提出了一种新的可靠的晶圆级1/f噪声测量方法和架构.测试架构采用了吉时利的一系列仪器,包括4200-SCS、428和一个低通滤波器,并且采用了吉时利的自动特征分析套件(ACS)软件来控制测量仪器的操作...
Minimizing electrical noise is an increasingly important topic. New systems and modulation technique...
Minimizing electrical noise is an increasingly important topic. New systems and modulation technique...
A new method for systematic measurements of noise parameters of field effect devices has been develo...
• Parameter extraction and statistical analysis are based on Accurate on-wafer measurement results: ...
Optimum design of low noise apparatuses need the accurate knowledge of noise parameters of the adopt...
Nowadays MOS device sizes and signal levels are aggressively scaled down, the low-frequency noise (L...
Optimum design of low noise apparatuses need the accurate knowledge of noise parameters of the adopt...
Optimum design of low noise apparatuses need the accurate knowledge of noise parameters of the adopt...
Optimum design of low noise apparatuses need the accurate knowledge of noise parameters of the adopt...
This thesis develops a systematic framework for the flicker noise measurement, characterization and ...
This thesis develops a systematic framework for the flicker noise measurement, characterization and ...
A new measurement setup is presented that allows the observation of 1/f noise spectra in MOSFET's un...
3)Laboratoire d’Electronique et de Technologie de l’Information, CEA Grenoble, France. Abstract − A ...
This work demonstrates a low frequency noise measurement technique and setup that is suitable for hi...
提出了一种新的可靠的晶圆级1/f噪声测量方法和架构.测试架构采用了吉时利的一系列仪器,包括4200-SCS、428和一个低通滤波器,并且采用了吉时利的自动特征分析套件(ACS)软件来控制测量仪器的操作...
Minimizing electrical noise is an increasingly important topic. New systems and modulation technique...
Minimizing electrical noise is an increasingly important topic. New systems and modulation technique...
A new method for systematic measurements of noise parameters of field effect devices has been develo...
• Parameter extraction and statistical analysis are based on Accurate on-wafer measurement results: ...
Optimum design of low noise apparatuses need the accurate knowledge of noise parameters of the adopt...
Nowadays MOS device sizes and signal levels are aggressively scaled down, the low-frequency noise (L...
Optimum design of low noise apparatuses need the accurate knowledge of noise parameters of the adopt...
Optimum design of low noise apparatuses need the accurate knowledge of noise parameters of the adopt...
Optimum design of low noise apparatuses need the accurate knowledge of noise parameters of the adopt...
This thesis develops a systematic framework for the flicker noise measurement, characterization and ...
This thesis develops a systematic framework for the flicker noise measurement, characterization and ...
A new measurement setup is presented that allows the observation of 1/f noise spectra in MOSFET's un...