The direct extraction of the key static parameters of a general diode by the new method named Linear Cofactor Difference Operator (LCDO) method has been carried out in this paper. From the developed LCDO method, the extreme spectral characteristic of the diode voltage versus current curves has been revealed, and its extreme positions are related to the diode characteristic parameters directly. Two different diodes are applied and the related characteristic parameters such as the reverse saturation current, the series resistance and non-ideality factor have been extracted directly and the results have also been discussed.EI
A new method is presented that permits the extraction of a semiconductor device\u27s intrinsic model...
The proportional difference operator (PDO) method is proposed to study the proportional difference c...
The proportional difference operator method is used to study the saturation characteristics of a lon...
The direct extraction of the key static parameters of a general diode by the new method named Linear...
The linear cofactor difference operator (LCDO) method, a direct parameter extraction method for gene...
Parameters that characterize semiconductor devices are often determined with difficulty, and their v...
This paper proposed an advanced logarithm cofactor difference operator (LogCDO) method to extract pa...
The linear cofactor difference extrema of metaloxide-semiconductor field effect transistor (MOSFET) ...
This paper proposed an advanced logarithm cofactor difference operator (LogCDO) method to extract pa...
In this paper, a genetic-based algorithm is proposed and implemented to extract diode circuit model ...
The linear cofactor difference extrema due to the nonlinearity of the MOSFET drain-current and their...
The linear cofactor difference extrema due to the nonlinearity of the MOSFET drain-current and their...
A new method for extracting junction parameters of the single diode model is presented. A least squa...
An attempt has been made for the determination of diode parameters viz. shunt resistance Rsh, series...
A simple technique, based on integrating the current-voltage characteristics, is proposed to determi...
A new method is presented that permits the extraction of a semiconductor device\u27s intrinsic model...
The proportional difference operator (PDO) method is proposed to study the proportional difference c...
The proportional difference operator method is used to study the saturation characteristics of a lon...
The direct extraction of the key static parameters of a general diode by the new method named Linear...
The linear cofactor difference operator (LCDO) method, a direct parameter extraction method for gene...
Parameters that characterize semiconductor devices are often determined with difficulty, and their v...
This paper proposed an advanced logarithm cofactor difference operator (LogCDO) method to extract pa...
The linear cofactor difference extrema of metaloxide-semiconductor field effect transistor (MOSFET) ...
This paper proposed an advanced logarithm cofactor difference operator (LogCDO) method to extract pa...
In this paper, a genetic-based algorithm is proposed and implemented to extract diode circuit model ...
The linear cofactor difference extrema due to the nonlinearity of the MOSFET drain-current and their...
The linear cofactor difference extrema due to the nonlinearity of the MOSFET drain-current and their...
A new method for extracting junction parameters of the single diode model is presented. A least squa...
An attempt has been made for the determination of diode parameters viz. shunt resistance Rsh, series...
A simple technique, based on integrating the current-voltage characteristics, is proposed to determi...
A new method is presented that permits the extraction of a semiconductor device\u27s intrinsic model...
The proportional difference operator (PDO) method is proposed to study the proportional difference c...
The proportional difference operator method is used to study the saturation characteristics of a lon...