Drain bias effect on the interface traps of pMOSFETs under negative bias temperature stress

Negative bias temperature instability (NBTI) has been a major reliability issue for advanced CMOS technology. Significant drain-bias effect on NBTI has been demonstrated. In this paper, the correlation between drain-bias dependent NBTI and the interface trap (Nit) is studied. Charging pumping measurement was performed to monitor the Nit behavior and on-the-fly technique was used to measure the degradation and recovery behaviors of threshold voltage (??Vth) in the pMOSFETs. The results show that significant NBTI degradation under higher drain bias can be owed to the drain bias enhanced generation of the non-recovered interfacial traps associated with Si-H bond breaking effect. ?The Electrochemical Society.EI