Analysis of the influence of contact position to the ESD protection ability in Ggnmos device

For the silicided GGnMOS as ESD protection device, the current localization in the n+ diffusion duo to the short contact spacing often degrades the ESD performance of the device. By enlarging the contact spacing, ballasting resistance is introduced to allow a more uniform current distribution. How the drain contact to gate spacing and contact to contact spacing influencing the ESD performance of the GGnMOS is investigated. We find that lengthening the contact to contact spacing can significantly improve the ESD performance of silicided GGnMOS. ? 2011 Springer-Verlag.EI