A-IGZO thin film transistors with channel layer deposited at room temperature and 250C

The a-IGZO thin film transistors with channel layer deposited at room temperature and 250??C are fabricated in this work. Results show the TFTs with IGZO film deposited at 250??C have lower threshold voltage, higher carrier mobility, and better sub-threshold slope than that with IGZO film deposited at room temperature. X-ray photoelectron spectroscopy measurement shows the proportion of Indium atoms in the IGZO film deposited at 250??C is higher than at room temperature. ? 2014 IEEE.EI