The static BTI stress (DC stress) have a significant influence on duty cycle of Ring Oscillators, low power SRAMs and dynamic register files because of its asymmetrical gradation. A ring oscillator based structure is proposed to measure the duty cycle of an inverter chain based ring oscillator. The proposed structure can measure the duty cycle shifts conveniently and accurately. Simulating results shows that benefiting from the continuous accumulation, the duty-cycle of the inverter chain can be measured accurately. ? 2014 IEEE.EI
Precise measurement of digital circuit degradation is a key aspect of aging tolerant digital circuit...
Aging due to bias-temperature-instability (BTI) is the dominant cause of functional failure in large...
© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for a...
Circuit reliability issues have great attention to the researchers, especially bias temperature inst...
A ring oscillator based structure in digital circuits is presented for measuring NBTI and PBTI effec...
Ring oscillator based test structures that can separately measure the NBTI and PBTI degradation effe...
The degradation predicted by classical DC reliability methods, such as bias temperature instability ...
Duty cycle and frequency are important characteristics of periodic signals that are exploited ...
A description is given of a test structure consisting of a combination of a ring oscillator and an i...
This paper presents a time-domain method for estimating the jitter in ring oscillators that is due t...
The represented paper is aimed at stress calculation in circuit cards with their representation as a...
The frequency shift of ring oscillators operated at high power supply voltages exhibits hot-carrier ...
Project (M.S., Electrical and Electronic Engineering)--California State University, Sacramento, 2014...
Ring oscillators are a common circuit element with broad application. Their advantages include a sma...
Technology scaling enables lower supply voltages, but also increases power density of integrated cir...
Precise measurement of digital circuit degradation is a key aspect of aging tolerant digital circuit...
Aging due to bias-temperature-instability (BTI) is the dominant cause of functional failure in large...
© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for a...
Circuit reliability issues have great attention to the researchers, especially bias temperature inst...
A ring oscillator based structure in digital circuits is presented for measuring NBTI and PBTI effec...
Ring oscillator based test structures that can separately measure the NBTI and PBTI degradation effe...
The degradation predicted by classical DC reliability methods, such as bias temperature instability ...
Duty cycle and frequency are important characteristics of periodic signals that are exploited ...
A description is given of a test structure consisting of a combination of a ring oscillator and an i...
This paper presents a time-domain method for estimating the jitter in ring oscillators that is due t...
The represented paper is aimed at stress calculation in circuit cards with their representation as a...
The frequency shift of ring oscillators operated at high power supply voltages exhibits hot-carrier ...
Project (M.S., Electrical and Electronic Engineering)--California State University, Sacramento, 2014...
Ring oscillators are a common circuit element with broad application. Their advantages include a sma...
Technology scaling enables lower supply voltages, but also increases power density of integrated cir...
Precise measurement of digital circuit degradation is a key aspect of aging tolerant digital circuit...
Aging due to bias-temperature-instability (BTI) is the dominant cause of functional failure in large...
© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for a...