Silicon carbide (SiC) is an attractive material for high-temperature, high-power, high-frequency applications, due to its outstanding electrical, mechanical properties, and chemical inertness. SiC semiconductor technology has been developed widely since the commercialization of 6H-SiC and 4H-SiC bulk SiC wafers in 1990s. This paper reviews the recent patents on SiC semiconductor technology, introduces the achievements both in academy and industry for micro-machining technologies, circuits devices. All these developments are driving high-performance SiC devices into harsh environment applications.? 2011 Bentham Science Publishers.EI03191-200
Silicon carbide based semiconductor electronic devices and circuits are presently being developed fo...
The paper presents an overview over recent developments in the SiC field. Within this field, two mai...
Silicon (Si) based power devices have been employed in most high power applications since decades ag...
Abstract: Silicon carbide (SiC) is an attractive material for high-temperature, high-power, high-fre...
Due to its desirable material properties, Silicon Carbide (SiC) hasbecome an alternative material to...
Silicon carbide (SiC) is a wide band gap material that shows great promise in high-power and high te...
Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, ...
The status of emerging silicon carbide (SiC) widebandgap semiconductor electronics technology is bri...
Abstract: Silicon carbide (SiC) has revolutionised semiconductor power device performance. It is a w...
This paper deals with possibility of application of the semiconductor devices based on the SiC (Sili...
Wide bandgap semiconductors, such as silicon carbide, have a great potential for high-temperature, h...
Silicon carbide (SiC) has revolutionised semiconductor power device performance. It is a wide band g...
Silicon carbide (SiC) semiconductor devices for high power applications are now commercially availab...
Silicon carbide (SiC) semiconductor devices for high power applications are now commercially availab...
A number of industries such as automotive, health and energy require micro-sensors and actuators tha...
Silicon carbide based semiconductor electronic devices and circuits are presently being developed fo...
The paper presents an overview over recent developments in the SiC field. Within this field, two mai...
Silicon (Si) based power devices have been employed in most high power applications since decades ag...
Abstract: Silicon carbide (SiC) is an attractive material for high-temperature, high-power, high-fre...
Due to its desirable material properties, Silicon Carbide (SiC) hasbecome an alternative material to...
Silicon carbide (SiC) is a wide band gap material that shows great promise in high-power and high te...
Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, ...
The status of emerging silicon carbide (SiC) widebandgap semiconductor electronics technology is bri...
Abstract: Silicon carbide (SiC) has revolutionised semiconductor power device performance. It is a w...
This paper deals with possibility of application of the semiconductor devices based on the SiC (Sili...
Wide bandgap semiconductors, such as silicon carbide, have a great potential for high-temperature, h...
Silicon carbide (SiC) has revolutionised semiconductor power device performance. It is a wide band g...
Silicon carbide (SiC) semiconductor devices for high power applications are now commercially availab...
Silicon carbide (SiC) semiconductor devices for high power applications are now commercially availab...
A number of industries such as automotive, health and energy require micro-sensors and actuators tha...
Silicon carbide based semiconductor electronic devices and circuits are presently being developed fo...
The paper presents an overview over recent developments in the SiC field. Within this field, two mai...
Silicon (Si) based power devices have been employed in most high power applications since decades ag...