Abnormal off-state leakage current increasing with reduced silicon body thickness in nano-SOI devices

A novel phenomenon is revealed in this paper, i.e., when the channel doping concentration is heavy, the off-state current doesn't show the continuous decreasing trend with the decrease of silicon body thickness as most literatures reported. Detailed explanation was presented. Therefore, as far as LOP applications arc concerned, in comparison with UTB MOSFET, slightly higher channel doping and much thicker silicon body thickness can be considered as a better choice for device design. ?2004 IEEE.EI