Carrier-based analytic model for the undoped symmetric double-gate MOSFETs

A carrier-based analytic model for undoped symmetric double-gate MOSFETs is presented. It is based on an exact solution of the Poisson equation coupled to the Pao-Sah current formulation in terms of the carrier concentration. From this model, the different dependences of the surface potential, centric potential, inversion charge and the current on the silicon body thickness and the gate oxide are elucidated analytically, and then the predicted I-V characteristics are compared with the 2D numerical simulations. The analytical results of the model presented show in a good agreement with the 2D simulation, demonstrating the model is valid for all operation regions and traces the transition between them without any auxiliary variable and function.EI0SUPPL.242-2472