Fully integrated CMOS readout circuit for particle detectors

Novel schemes for a charge sensitive amplifier (CSA) and a CR-(RC)n semi-Gaussian shaper in a fully integrated CMOS readout circuit for particle detectors are presented. The CSA is designed with poly-resistors as feedback components to reduce noise. Compared with conventional CSA, the input referred equivalent noise charge (ENC) is simulated to be reduced from 5036e to 2381e with a large detector capacitance of 150pF at the cost of 0.5 V output swing loss. The CR-(RC)n semi-Gaussian shaper uses MOS transistors in the triode region in series with poly-resistors to compensate process variation without much linearity reduction.EI02182-1882