Add to ORKGA detailed analysis of the strong inversion high frequency, capacitance under the Fowler-Nordheim (F-N) tunneling injection is of great relevance for the modeling and characterization of the thin oxide MOS devices and full exploration of the capabilities of floating gate E(2)prom. We found that the F-N current strongly affects the transient capacitance in the thin oxide MOS structures and has different behavior in NMOSC and PMOSC. The quasi-equilibrium capacitance decrease for PMOSC[1] and increase for NMOS-C-[2] with increasing F-N current. In this paper, we present an unified physical model that relates the dynamics cf the surface charge region of thin oxide PMOS and NMOS structures to the F-N tunneling injection.Engineering, Electrica...
textThe Metal-Oxide-Silicon (MOS) gate dielectrics have to be scaled down to about 1 nm to 0.5 nm e...
This paper describes a novel simulation of Fowler-Nordheim (F-N) tunneling of electrons from either ...
We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitativ...
A detailed analysis of the strong inversion high frequency capacitance under the Fowler-Nordheim (F-...
A simple analysis is presented of the effect of Fowler-Nordheim tunnelling current on thin-insulator...
A model of the rate of change of inversion charge has been used to investigate the capacitance relax...
In this paper, it was noted that the transient C-t characteristics under the high gate voltage was d...
This paper presents a new computer modeling of Fowler-Nordheim (F-N) tunneling current from an inver...
We have deduced the analytical expression of the tunneling current across a thin oxide layer for a M...
Electron trapping model and constant current stress have been used to study the effect of new genera...
In this paper, we present a simple model of Fowler-Nordheim (FN) current of metal/ultra-thin oxide/...
During recent years the thickness of the gate oxide has been reduced considerably. The progressive m...
textHigh dielectric constant materials are expected to replace SiO2 when the direct tunneling cur...
This paper proposes a physics-based model of flat-band capacitance Cfb for metal oxide thin-film tra...
Abstract: In this paper, an analytical model has been developed to study inversion layer quantizatio...
textThe Metal-Oxide-Silicon (MOS) gate dielectrics have to be scaled down to about 1 nm to 0.5 nm e...
This paper describes a novel simulation of Fowler-Nordheim (F-N) tunneling of electrons from either ...
We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitativ...
A detailed analysis of the strong inversion high frequency capacitance under the Fowler-Nordheim (F-...
A simple analysis is presented of the effect of Fowler-Nordheim tunnelling current on thin-insulator...
A model of the rate of change of inversion charge has been used to investigate the capacitance relax...
In this paper, it was noted that the transient C-t characteristics under the high gate voltage was d...
This paper presents a new computer modeling of Fowler-Nordheim (F-N) tunneling current from an inver...
We have deduced the analytical expression of the tunneling current across a thin oxide layer for a M...
Electron trapping model and constant current stress have been used to study the effect of new genera...
In this paper, we present a simple model of Fowler-Nordheim (FN) current of metal/ultra-thin oxide/...
During recent years the thickness of the gate oxide has been reduced considerably. The progressive m...
textHigh dielectric constant materials are expected to replace SiO2 when the direct tunneling cur...
This paper proposes a physics-based model of flat-band capacitance Cfb for metal oxide thin-film tra...
Abstract: In this paper, an analytical model has been developed to study inversion layer quantizatio...
textThe Metal-Oxide-Silicon (MOS) gate dielectrics have to be scaled down to about 1 nm to 0.5 nm e...
This paper describes a novel simulation of Fowler-Nordheim (F-N) tunneling of electrons from either ...
We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitativ...