Add to ORKGThe extensive simulations are carried out to study impact of high K dielectric both on the channel and the source/drain extension region of a typical 70nm MOSFET by two dimensional device simulator ISE. The key factors affecting the device characteristics are investigated. The different structures of high K gate dielectric MOSFETs including SOI MOSFET and recess channel MOSFET are also simulated.http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000174745900073&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701Engineering, Electrical & ElectronicMaterials Science, MultidisciplinaryPhysics, AppliedPhysics, Condensed MatterCPCI-S(ISTP)
Scaling of metal-oxide-semiconductor (MOS) transistors to smaller dimensions has been a key driving ...
This paper analyzes in detail the fringing induced barrier lowering (FIBL) in MOS transistors with h...
The potential impact of high permittivity gate dielectrics on device short channel and circuit perfo...
The extensive simulations are carried out to study impact of high K dielectric both on the channel a...
The characteristics of a typical 70nm high K gate dielectrics MOSFET with different source/drain str...
用二维模拟软件ISE研究了典型的70nm高K介质MOSFETs的短沟性能.结果表明,由于FIBL效应,随着栅介质介电常数的增大,阈值电区减小,而漏电流和亚阈值摆幅增大,导致器件短沟性能退化.这种退化可...
The short-channel performance of typical 70 nm MOSFETs with high K gate dielectric was studied by a ...
The potential impact of high-κ gate dielectrics on device short-channel performance is studied over ...
The impact of technology scaling on the MOS transistor performance is studied over a wide range of d...
The potential impact of high permittivity gate dielectrics 0n the circuit performance is studied ove...
The potential impact of high permittivity gate dielectrics 0n the circuit performance is studied ove...
The MOSFET gate currents of high k gate dielectrics are investigated by using a new direct tunneling...
An analytic threshold voltage model, which can account for the short channel effect and the fringing...
This paper presents the electrical behaviour of Double Gate (DG) and Gate-All-Around nanowire (GAA) ...
This paper presents the electrical behaviour of Double Gate (DG) and Gate-All-Around nanowire (GAA) ...
Scaling of metal-oxide-semiconductor (MOS) transistors to smaller dimensions has been a key driving ...
This paper analyzes in detail the fringing induced barrier lowering (FIBL) in MOS transistors with h...
The potential impact of high permittivity gate dielectrics on device short channel and circuit perfo...
The extensive simulations are carried out to study impact of high K dielectric both on the channel a...
The characteristics of a typical 70nm high K gate dielectrics MOSFET with different source/drain str...
用二维模拟软件ISE研究了典型的70nm高K介质MOSFETs的短沟性能.结果表明,由于FIBL效应,随着栅介质介电常数的增大,阈值电区减小,而漏电流和亚阈值摆幅增大,导致器件短沟性能退化.这种退化可...
The short-channel performance of typical 70 nm MOSFETs with high K gate dielectric was studied by a ...
The potential impact of high-κ gate dielectrics on device short-channel performance is studied over ...
The impact of technology scaling on the MOS transistor performance is studied over a wide range of d...
The potential impact of high permittivity gate dielectrics 0n the circuit performance is studied ove...
The potential impact of high permittivity gate dielectrics 0n the circuit performance is studied ove...
The MOSFET gate currents of high k gate dielectrics are investigated by using a new direct tunneling...
An analytic threshold voltage model, which can account for the short channel effect and the fringing...
This paper presents the electrical behaviour of Double Gate (DG) and Gate-All-Around nanowire (GAA) ...
This paper presents the electrical behaviour of Double Gate (DG) and Gate-All-Around nanowire (GAA) ...
Scaling of metal-oxide-semiconductor (MOS) transistors to smaller dimensions has been a key driving ...
This paper analyzes in detail the fringing induced barrier lowering (FIBL) in MOS transistors with h...
The potential impact of high permittivity gate dielectrics on device short channel and circuit perfo...