The optical properties of AlGaN/GaN p-i-n structure

The p-i-n structure ultraviolet detectors were better sensitive and response speed than other structure detectors. The AlGaN/GaN p-i-n structure on sapphire substrates was grown by metal-organic chemical vapor deposition (MOCVD) method. The sample was annealed in the nitrogen using the rapid annealed method for the activation of Mg atom in the AlGaN layer. In order to discern on the physical mechanisms that affect the ultraviolet detectors, the properties of the sample was analyzed by XRD, PL, PLE and reflective spectra. The hall mobility and carrier concentration of the hole of p-AlGaN were measured by using the Hall effect. The optical properties of the sample will be helpful on the design and performance of the detectors.Instruments & InstrumentationCPCI-S(ISTP)