Add to ORKGIn this work, the interface traps spatial distribution in 0.135 mu m n-MOSFET under V-G=V-D/2 stress mode by Gated-Diode method was studied. Not only interface traps generated in drain region trend to saturate at the beginning of hot carrier stress. but also interface traps generated in channel may trend to saturate. Interface traps generated in source region show no saturation and increase device source-drain parasitic resistance linearly along stress time. This experiment result is tentatively interpreted by HRS model that the distance from mobile hydrogen generating location to interface location determines interface traps generation rate and saturation time at interface location.http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVe...
A novel simulation-independent charge pumping (CP) technique is employed to accurately determine the...
The nature and composition of generated interface-trap (ΔNIT) in p-MOSFETs is studied as a function ...
The generation of front and back gate interface and oxide traps due to a hot-carrier-stress in silic...
In this work, the interface traps spatial distribution in 0.135??m n-MOSFET under VG=VD/2 stress mod...
This peper describes the characterization of the hot carrier-induced interface traps by a forward ga...
The energy levels of interface states generated in n-MOSFETs during hot-carrier stressings under max...
The spatial distribution of interface traps in hot-carrier stressed lateral asymmetric channel (LAC)...
This paper describes a new measurement technique, the forward gated-diode current characterized at l...
This paper describes a new measurement technique, the forward gated-diode current characterized at l...
Hot-carrier effects of n-clannel MOSFETs are investigated under a series of stress modes. A novel me...
A new improved technique, based on the direct-current current-voltage and charge pumping methods, wa...
Stress-induced leakage current (SILC) of ultrathin gate oxide was investigated by observing the gene...
The dependence of increase in post-stress gate-induced-drain-leakage (GIDL) current in n-MOSFET's on...
[[abstract]]The generation of interface traps by different stresses to 4-nm thick SiO2 gate oxide is...
[[abstract]]The generation of interface traps by different stresses to 4-nm thick SiO2 gate oxide is...
A novel simulation-independent charge pumping (CP) technique is employed to accurately determine the...
The nature and composition of generated interface-trap (ΔNIT) in p-MOSFETs is studied as a function ...
The generation of front and back gate interface and oxide traps due to a hot-carrier-stress in silic...
In this work, the interface traps spatial distribution in 0.135??m n-MOSFET under VG=VD/2 stress mod...
This peper describes the characterization of the hot carrier-induced interface traps by a forward ga...
The energy levels of interface states generated in n-MOSFETs during hot-carrier stressings under max...
The spatial distribution of interface traps in hot-carrier stressed lateral asymmetric channel (LAC)...
This paper describes a new measurement technique, the forward gated-diode current characterized at l...
This paper describes a new measurement technique, the forward gated-diode current characterized at l...
Hot-carrier effects of n-clannel MOSFETs are investigated under a series of stress modes. A novel me...
A new improved technique, based on the direct-current current-voltage and charge pumping methods, wa...
Stress-induced leakage current (SILC) of ultrathin gate oxide was investigated by observing the gene...
The dependence of increase in post-stress gate-induced-drain-leakage (GIDL) current in n-MOSFET's on...
[[abstract]]The generation of interface traps by different stresses to 4-nm thick SiO2 gate oxide is...
[[abstract]]The generation of interface traps by different stresses to 4-nm thick SiO2 gate oxide is...
A novel simulation-independent charge pumping (CP) technique is employed to accurately determine the...
The nature and composition of generated interface-trap (ΔNIT) in p-MOSFETs is studied as a function ...
The generation of front and back gate interface and oxide traps due to a hot-carrier-stress in silic...