Add to ORKGBy using combined gate current and drain current random telegraph signal noise (I(g)-I(d) RTS) technique, both electron and hole traps within the gate stack of silicon nanowire transistors (SNWTs) with TiN metal gates are experimentally studied in this paper. For the first time. I(g) RTS is observed in p-SNWTs, which originated from electron traps that are induced by multiple crystal orientations of the cylindrical channel. While I(d) RTS is found to be related to hole traps in p-SNWTs. Therefore, it is demonstrated that this combined I(g)-I(d) RTS technique can be used to separately investigate the properties of electron and hole traps in SNWTs and other advanced MOSFETs. Based on corrected RTs model for gate-all-around (GAA) SNWT structur...
In this paper, detailed physical mechanisms of gate-induced drain leakage (GIDL) in gate-all-around ...
In this paper, the characteristic variability in gate-all-around (GAA) silicon nanowire MOSFETs (SNW...
Single gate oxide defects in strongly scaled Tunneling Field-Effect Transistors with an inverse subt...
By using combined gate current and drain current random telegraph signal noise (Ig-Id RTS) technique...
Random telegraph signal (RTS) noise is experimentally investigated in silicon nanowire transistors (...
Impacts of electron trapping/detrapping on the negative bias temperature instability (NBTI) characte...
We study random telegraph noise in the conductance of InAs nanowire field-effect transistors due to ...
In this paper, a new pattern of anomalous random telegraph noise (RTN), named "reversal RTN&quo...
Manipulation of carrier densities at the single electron level is inevitable in modern silicon based...
We investigate correlated gate (IG) and drain (ID) random telegraph noise phenomena observed in post...
We investigate correlated gate (IG) and drain (ID) random telegraph noise phenomena observed in post...
Gate dielectric traps are becoming a major concern in the high-k/metal gate devices. In this paper, ...
We report a novel methocl for probing the gate-voltage dependence of the surface potential of indivi...
We report a novel methocl for probing the gate-voltage dependence of the surface potential of indivi...
Gate dielectric traps are becoming a major concern in the high-k/metal gate devices. In this paper, ...
In this paper, detailed physical mechanisms of gate-induced drain leakage (GIDL) in gate-all-around ...
In this paper, the characteristic variability in gate-all-around (GAA) silicon nanowire MOSFETs (SNW...
Single gate oxide defects in strongly scaled Tunneling Field-Effect Transistors with an inverse subt...
By using combined gate current and drain current random telegraph signal noise (Ig-Id RTS) technique...
Random telegraph signal (RTS) noise is experimentally investigated in silicon nanowire transistors (...
Impacts of electron trapping/detrapping on the negative bias temperature instability (NBTI) characte...
We study random telegraph noise in the conductance of InAs nanowire field-effect transistors due to ...
In this paper, a new pattern of anomalous random telegraph noise (RTN), named "reversal RTN&quo...
Manipulation of carrier densities at the single electron level is inevitable in modern silicon based...
We investigate correlated gate (IG) and drain (ID) random telegraph noise phenomena observed in post...
We investigate correlated gate (IG) and drain (ID) random telegraph noise phenomena observed in post...
Gate dielectric traps are becoming a major concern in the high-k/metal gate devices. In this paper, ...
We report a novel methocl for probing the gate-voltage dependence of the surface potential of indivi...
We report a novel methocl for probing the gate-voltage dependence of the surface potential of indivi...
Gate dielectric traps are becoming a major concern in the high-k/metal gate devices. In this paper, ...
In this paper, detailed physical mechanisms of gate-induced drain leakage (GIDL) in gate-all-around ...
In this paper, the characteristic variability in gate-all-around (GAA) silicon nanowire MOSFETs (SNW...
Single gate oxide defects in strongly scaled Tunneling Field-Effect Transistors with an inverse subt...