Forming-less Unipolar TaOx-based RRAM with Large CC-independence Range for High Density Memory Applications

In this paper, a unipolar resistive change memory (RRAM) based on TaOx has been successfully fabricated. The fabricated unipolar RRAM exhibits lower switching voltages without any forming process, fast switching speed, good retention performance even under high temperature baking and stable cycling behavior. Multi-level of data storage can also be achieved by voltage control during the reset process. In addition, the current compliance (CC) effect on the behavior of the device has also been investigated. Based on the measurements, the switching voltages/currents and the low resistance state (LRS) of the device have little dependence on CC, which can effectively simplify RRAM circuit design. Resistive switching polarity dependence on the bi-layer structure has also been analyzed with comparative experiments.http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000313327800001&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701ElectrochemistryEngineering, Electrical & ElectronicEICPCI-S(ISTP)