A Test Structure and Spectroscopic Method for Monitoring Interface Traps

A new test structure and spectroscopic characterization method for monitoring interface traps in MOSFETs is proposed, which can be used to directly evaluate the interface traps on both n- and p-type Si/SiO2 interfaces through one-time direct current IV measurement. Based on the structure design and testing setup, a two-peak spectrum can be obtained. The properties of interface traps on both n- and p-type Si/SiO2 interfaces can be distinguished by the peak height and position. Some effects on the spectroscopic method by the test structure design parameters have been studied systematically. Its application in reliability research was demonstrated.http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000325097500181&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701Engineering, Electrical & ElectronicPhysics, AppliedEICPCI-S(ISTP)