Gated-diode recombination-generation current: a sensitive tool for characterizing bulk traps of SOI devices

In this paper, main characteristics of the recombination-generation (R-G) current of the bulk traps in SOI gated-diode have been analyzed numerically. By using the simulation tool, ISE-DESSIS, the dependence of the R-G current on the bulk trap characteristics has been demonstrated and the influence of silicon film structure has been examined. Moreover, we have reproduced the experimental results of a SOI lateral p(+)p(-)n(+) diode. Agreements between the simulation and experiments indicate the R-G current is an effective pointer for monitoring the bulk traps of SOI devices.http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000170761400010&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701Engineering, Electrical & ElectronicSCI(E)EI2ARTICLE3321-3251