Low-parasitic ESD protection strategy for RF ICs in 0.35 mu m CMOS process

A systemic and comprehensive ESD-induced parasitic model is presented in this paper, which is used to analyse the parasitic influences of electrostatic discharge (ESD) protection circuits on the performance of radio frequency applications. A novel low-parasitic ESD protection structure is made in a 0.35 mu m 1P3M silicide CMOS process. The measured results show that this novel structure has a low parasitic capacitance about 310fF and a low leakage current about 12.2nA with a suitable ESD robustness target about 5kV human body model.Physics, MultidisciplinarySCI(E)EI中国科技核心期刊(ISTIC)中国科学引文数据库(CSCD)5ARTICLE102297-23051