Numerical Simulation of Detection Response of Field Effect MOS Transistor to Modulated Terahertz Radiation Signal

The detector response characteristics of the field effect MOS transistor (MOSFET) to modulated terahertz radiation signal are studied in details in this paper by a numerical simulation method developed from the basic hydrodynamic equations which govern the terahertz signal transport in the MOSFET. The numerical method is used with a universal MOSFET carrier density equation coupled to the basic hydrodynamic equations in a much wider range of operation region of MOSFET terahertz detector to develop the numerical simulation program. The simulation results agree well with the existing theory which is only suitable in the nonresonant region. The developed numerical simulation program is also used to analyze the photoresponse characteristics of the MOSFET detector to modulated terahertz radiation in the resonant region, demonstrating potential application in the detector design and optimization from a MOSFET.http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000279873900007&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701Chemistry, MultidisciplinaryNanoscience & NanotechnologyMaterials Science, MultidisciplinaryPhysics, AppliedPhysics, Condensed MatterSCI(E)EI0ARTICLE81386-1392