Add to ORKGIn this paper, a new closed-form charge-based intrinsic capacitances model for different operation regions is developed. This model physically accounts for the predominant short-channel effects in simple explicit expressions, such as threshold voltage shift, drain induced conductivity enhancement (DICE), mobility degradation and channel length modulation (CLM) effects. The model based on a continuous drain current equation, accurately describes capacitances properties of short-channel device in the linear and saturation regime. Good agreement is obtained between the model calculated results and Medici simulated results.http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:00008715730...
Intrinsic gate-capacitance characteristics of long-channel SOI MOSFETs are investigated by measureme...
This model is developed for the saturation region based on a detailed analysis of special physical e...
This paper presents a charge-based compact model for predicting the current-voltage and capacitance-...
A large signal capacitance model for thin film SOI/MOSFETs was developed based on the special thin f...
Measurements of intrinsic gate capacitances of SOI MOSFETs are described and shown to provide valuab...
The theoretical foundation of unique floating substrate effects, which have been observed experiment...
Based upon a common charge-sheet approach analytical models of the drain current and the capacitance...
[[abstract]]As the gate oxide thickness is vigorously scaled down, quantization-induced charge layer...
The models presented so far for accumulation-mode (AM) SOI MOSFETs are not very appropriate for mixe...
Silicon-On-Insulator (SOI) technology, which was originally developed for military applications, is ...
This paper presents original measurements and two-dimensional simulations of high-temperature SOI MO...
A unified charge-based model for fully depleted silicon-on-insulator (SOI) metal-oxide semiconductor...
In compact transistor modeling for circuit simulation, the capacitances of conventional MOS devices ...
A unified charge-based model for SOI MOSFETs is presented. The proposed model is valid and accurate ...
Abstract — In compact transistor modeling for circuit simula-tion, the capacitances of conventional ...
Intrinsic gate-capacitance characteristics of long-channel SOI MOSFETs are investigated by measureme...
This model is developed for the saturation region based on a detailed analysis of special physical e...
This paper presents a charge-based compact model for predicting the current-voltage and capacitance-...
A large signal capacitance model for thin film SOI/MOSFETs was developed based on the special thin f...
Measurements of intrinsic gate capacitances of SOI MOSFETs are described and shown to provide valuab...
The theoretical foundation of unique floating substrate effects, which have been observed experiment...
Based upon a common charge-sheet approach analytical models of the drain current and the capacitance...
[[abstract]]As the gate oxide thickness is vigorously scaled down, quantization-induced charge layer...
The models presented so far for accumulation-mode (AM) SOI MOSFETs are not very appropriate for mixe...
Silicon-On-Insulator (SOI) technology, which was originally developed for military applications, is ...
This paper presents original measurements and two-dimensional simulations of high-temperature SOI MO...
A unified charge-based model for fully depleted silicon-on-insulator (SOI) metal-oxide semiconductor...
In compact transistor modeling for circuit simulation, the capacitances of conventional MOS devices ...
A unified charge-based model for SOI MOSFETs is presented. The proposed model is valid and accurate ...
Abstract — In compact transistor modeling for circuit simula-tion, the capacitances of conventional ...
Intrinsic gate-capacitance characteristics of long-channel SOI MOSFETs are investigated by measureme...
This model is developed for the saturation region based on a detailed analysis of special physical e...
This paper presents a charge-based compact model for predicting the current-voltage and capacitance-...