Forward gated-diode R-G current method for characterizing the lateral lightly doping region of the NMOSFET/SOI

Forward gated-diode recombination-generation (R-G) current method for characterizing the lateral lightly doping (LDD) region of the NMOS-FET/SOI has been investigated numerically in this paper for the first time. It has been shown that the simple forward gated-diode method can directly determine the effective surface doping concentration of the LDD region of the source/drain (S/D) and its interface trap density in the NMOSFET/SOI simultaneously. Numerical analysis result demonstrates that the surface doping concentration and interface trap density of the LDD region are R-G current peak position and amplitude dependent, respectively. Based on this feature, direct characterization of the interface traps and the characteristic effective surface doping concentration of the LDD region becomes possible. We believe that the presented method will be a very useful tool in characterization of deep sub-micron MOSFETs.http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000173567900017&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701Engineering, Electrical & ElectronicSCI(E)EI0ARTICLE174-781