We report herein a method to fabricate an electrical switch device in which two crossed carbon nanotubes (CNTs) serve as electrode contacts and Ag-tetracyanoquinodimethane (AgTCNQ) is embedded into the crossed point functions as the electrical bistable medium. To fabricate this device, an electrodeposition method is used to grow AgTCNQ particles along a CNT, and then the top CNT is placed intersectionally over the former tube wrapped with AgTCNQ. The device shows typical switching performance with an on/off ratio up to 10(3). The excellent electrical properties and nanoscale diameter of CNTs of this device show promising applications in the integrations of CNT nanoelectronics. (C) 2008 American Institute of Physics.Physics, AppliedSCI(E)9AR...
We present the fabrication and high frequency characterization of a capacitive nanoelectromechanical...
Carbon-based nanoelectromechanical devices are approaching applications in electronics. Switches bas...
Material transfer in switching contacts is considered at very low currents, (below 20mA). The transf...
We demonstrated a prototype of nanoelectromechanical switch which was fabricated with single-walled ...
We report a highly efficient switch built from an organic molecule assembled between single-wall car...
High-quality charge-transfer complex AgTCNQ nanowires have been successfully synthesized by a facile...
Three-terminal nanorelay structures were fabricated with multiwall carbon nanotubes (MWNTs). The nan...
The carbon nanotube/oxide/metal/crossed carbon nanotube (COMC) structure was first fabricated and de...
We exploit the remarkable low-friction bearing capabilities of multiwalled carbon nanotubes (MWNTs) ...
Carbon nanotubes (CNTs) have been considered one of the most promising material to make nanodevices,...
The paper presents the carbon nanotubes (CNTs) alignment and length dependence with respect to the c...
AbstractThe paper presents the carbon nanotubes (CNTs) alignment and length dependence with respect ...
Micro-/nanoelectromechanical (MEM/NEM) switches have been extensively studied to address the limitat...
We present theoretical and experimental investigations of three-terminal nanoelectromechanical relay...
In the last forty years the semiconductor industry focused on the downscaling process of the CMOS (C...
We present the fabrication and high frequency characterization of a capacitive nanoelectromechanical...
Carbon-based nanoelectromechanical devices are approaching applications in electronics. Switches bas...
Material transfer in switching contacts is considered at very low currents, (below 20mA). The transf...
We demonstrated a prototype of nanoelectromechanical switch which was fabricated with single-walled ...
We report a highly efficient switch built from an organic molecule assembled between single-wall car...
High-quality charge-transfer complex AgTCNQ nanowires have been successfully synthesized by a facile...
Three-terminal nanorelay structures were fabricated with multiwall carbon nanotubes (MWNTs). The nan...
The carbon nanotube/oxide/metal/crossed carbon nanotube (COMC) structure was first fabricated and de...
We exploit the remarkable low-friction bearing capabilities of multiwalled carbon nanotubes (MWNTs) ...
Carbon nanotubes (CNTs) have been considered one of the most promising material to make nanodevices,...
The paper presents the carbon nanotubes (CNTs) alignment and length dependence with respect to the c...
AbstractThe paper presents the carbon nanotubes (CNTs) alignment and length dependence with respect ...
Micro-/nanoelectromechanical (MEM/NEM) switches have been extensively studied to address the limitat...
We present theoretical and experimental investigations of three-terminal nanoelectromechanical relay...
In the last forty years the semiconductor industry focused on the downscaling process of the CMOS (C...
We present the fabrication and high frequency characterization of a capacitive nanoelectromechanical...
Carbon-based nanoelectromechanical devices are approaching applications in electronics. Switches bas...
Material transfer in switching contacts is considered at very low currents, (below 20mA). The transf...