研究了ETOXTM结构FLASH memory单元器件在VFG≈VD/2的热载流子写入应力条件下,衬底负偏置对单元器件耐久性退化的影响.结果表明:在既定的栅、漏偏置条件下,随着衬底负偏置的增加,器件耐久性退化会出现极小值.综合考虑了器件耐久性退化以及写入效率两方面的要求以后,确定了在VFG≈VD/2热载流子写入应力模式下,FLASH memory单元器件具有增强写入效率以及最小耐久性退化的最佳衬底负偏置条件.国家重点基础研究发展计划(973计划)中文核心期刊要目总览(PKU)中国科学引文数据库(CSCD)061115-11192
International audienceIn this paper the impact of the endurance degradation on the programming windo...
Degradation of ultra-thin gate-oxide n-channel metal-oxide-semiconductor field-effect transistors wi...
This paper analyzes in detail the substrate enhanced gate current injection mechanism and the result...
The effects of reverse substrate bias on the endurance degradation of ETOXTM FLASH memory devices un...
隨著快閃記憶體在眾多領域的廣泛應用，可靠性成為了一個關鍵的議題。引發這個研究的動機在於工業界常將具有瑕疵的快閃記憶體「次級化」後售出，但仍需在低成本的考量下保證其產品具有一定的使用壽命。面對此類強烈的...
研究了不同沟道和栅氧化层厚度的n-MOS器件在衬底正偏压的VG=VD/2热载流子应力下,由于衬底正偏压的不同对器件线性漏电流退化的影响.实验发现衬底正偏压对沟长1.135 μm,栅氧化层厚度2.5 n...
Рассматриваются вопросы построения современной флэш-памяти и анализируются модели неисправностей ...
Endurance degradation is a limitation for implementing futurescaled flash memory devices. This degra...
Low power consumption, virtually zero latency, extremely fast boot-up for OS and applications, fast ...
La technologie Flash représente aujourd’hui la mémoire non-volatile de référence dans plusieurs appl...
Degradation of ultra-thin gate oxide n-MOSFET with halo structure is studied under different stress ...
为了筛选出适宜于闪蒸-双工质联合发电系统的循环工质,建立了闪蒸-双工质联合发电系统的热力学模型。在这个计算模型中,采用热水温度范围为100-150℃,热水流量取为36t/h,冷却水进口温度设定为15℃...
In this paper, the effects of negative substrate bias on the drain disturb of NOR ETOX? flash EEPROM...
The effect of programming biases on the cycling endurance of NOR flash EEPROMs is studied under CHE ...
La réduction des tailles aux niveaux transistors des composants électroniques commerciaux est rendue...
International audienceIn this paper the impact of the endurance degradation on the programming windo...
Degradation of ultra-thin gate-oxide n-channel metal-oxide-semiconductor field-effect transistors wi...
This paper analyzes in detail the substrate enhanced gate current injection mechanism and the result...
The effects of reverse substrate bias on the endurance degradation of ETOXTM FLASH memory devices un...
隨著快閃記憶體在眾多領域的廣泛應用，可靠性成為了一個關鍵的議題。引發這個研究的動機在於工業界常將具有瑕疵的快閃記憶體「次級化」後售出，但仍需在低成本的考量下保證其產品具有一定的使用壽命。面對此類強烈的...
研究了不同沟道和栅氧化层厚度的n-MOS器件在衬底正偏压的VG=VD/2热载流子应力下,由于衬底正偏压的不同对器件线性漏电流退化的影响.实验发现衬底正偏压对沟长1.135 μm,栅氧化层厚度2.5 n...
Рассматриваются вопросы построения современной флэш-памяти и анализируются модели неисправностей ...
Endurance degradation is a limitation for implementing futurescaled flash memory devices. This degra...
Low power consumption, virtually zero latency, extremely fast boot-up for OS and applications, fast ...
La technologie Flash représente aujourd’hui la mémoire non-volatile de référence dans plusieurs appl...
Degradation of ultra-thin gate oxide n-MOSFET with halo structure is studied under different stress ...
为了筛选出适宜于闪蒸-双工质联合发电系统的循环工质,建立了闪蒸-双工质联合发电系统的热力学模型。在这个计算模型中,采用热水温度范围为100-150℃,热水流量取为36t/h,冷却水进口温度设定为15℃...
In this paper, the effects of negative substrate bias on the drain disturb of NOR ETOX? flash EEPROM...
The effect of programming biases on the cycling endurance of NOR flash EEPROMs is studied under CHE ...
La réduction des tailles aux niveaux transistors des composants électroniques commerciaux est rendue...
International audienceIn this paper the impact of the endurance degradation on the programming windo...
Degradation of ultra-thin gate-oxide n-channel metal-oxide-semiconductor field-effect transistors wi...
This paper analyzes in detail the substrate enhanced gate current injection mechanism and the result...
DOI
Add to ORKG