In this paper, a novel method based on hybrid genetic algorithm (GA) was developed to extract parameters of analytical or part-analytical models. It needn't complex computation compared with conventional methods or other compound genetic algorithm. With a simple input file and opening model codes, it was easy to be modified for other models. Using this method, parameters of BSIMPD MOSFET threshold voltage were extracted, the simulation result with this method agrees well with the experimental result. ? 2006 IEEE.EI
A general, direct parameter extraction algorithm that uses a small number of data points has been de...
This work shows that physically meaningful wideband, multi-bias small-signal modeling of HBTs can be...
The threshold voltage is a key parameter in the silicon MOSFET design and operation. This paper give...
In this paper, a genetic-based algorithm is proposed and implemented to extract diode circuit model ...
In this paper, parameter extraction for PSP MOSFET model is demonstrated using Particle Swarm Optimi...
Efficient DC parameter extraction technique for MOS Model 11, level 1100 (MM11) is outlined. The par...
A proposed small-signal model parameters for a pseudomorphic high electron mobility transistor (PHEM...
This article provides a unified look at MOSFET model parameter extraction methods that rely on the a...
A new method for the extraction of the MOSFET parameters is presented in this letter. The method, wh...
This article provides a unified look at MOSFET model parameter extraction methods that rely on the a...
The technique of extraction and identification of electrical models parameters for nanoscale semicon...
Extraction of MOSFET parameters is a very important task for the purposes of MOS integrated circuits...
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Compute...
abstract: NGExtract 2 is a complete transistor (MOSFET) parameter extraction solution based upon the...
published_or_final_versionElectrical and Electronic EngineeringMasterMaster of Philosoph
A general, direct parameter extraction algorithm that uses a small number of data points has been de...
This work shows that physically meaningful wideband, multi-bias small-signal modeling of HBTs can be...
The threshold voltage is a key parameter in the silicon MOSFET design and operation. This paper give...
In this paper, a genetic-based algorithm is proposed and implemented to extract diode circuit model ...
In this paper, parameter extraction for PSP MOSFET model is demonstrated using Particle Swarm Optimi...
Efficient DC parameter extraction technique for MOS Model 11, level 1100 (MM11) is outlined. The par...
A proposed small-signal model parameters for a pseudomorphic high electron mobility transistor (PHEM...
This article provides a unified look at MOSFET model parameter extraction methods that rely on the a...
A new method for the extraction of the MOSFET parameters is presented in this letter. The method, wh...
This article provides a unified look at MOSFET model parameter extraction methods that rely on the a...
The technique of extraction and identification of electrical models parameters for nanoscale semicon...
Extraction of MOSFET parameters is a very important task for the purposes of MOS integrated circuits...
Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Compute...
abstract: NGExtract 2 is a complete transistor (MOSFET) parameter extraction solution based upon the...
published_or_final_versionElectrical and Electronic EngineeringMasterMaster of Philosoph
A general, direct parameter extraction algorithm that uses a small number of data points has been de...
This work shows that physically meaningful wideband, multi-bias small-signal modeling of HBTs can be...
The threshold voltage is a key parameter in the silicon MOSFET design and operation. This paper give...