Process Simulation of DRIE and its Application in Tapered TSV Fabrication

TSV (Through Silicon Via) has been widely welcomed as an enabling technology for three-dimensional integration in a package with high density. The developing of a drilling method for TSVs with tapered sections by experimental methodology can be a tedious task. The authors thus explore the possibility to simulate the process conditions effectively with an in-house developed simulator which utilize hybrid line and cell evolution algorithms. The micro-fabrication using the parameters obtained by the simulation has demonstrated TSVs with tapered sectional profiles and filled with electroplated coppers as expected, which validates the effectiveness of the simulated results.Engineering, Electrical & ElectronicEngineering, MechanicalEICPCI-S(ISTP)