A Unified FinFET Reliability Model Including High K Gate Stack Dynamic Threshold Voltage, Hot Carrier Injection, and Negative Bias Temperature Instability

A unified FinFET reliability model including high K stack dynamic threshold (HKSDT), hot carrier injection (HCI), and negative bias temperature instability (NBTI) has been developed and verified by experimental data. The FinFET based circuit performances are simulated and compared under these reliability issues by HSPICE simulator after the inclusion of the presented model.Automation & Control SystemsEngineering, Electrical & ElectronicNanoscience & NanotechnologyEICPCI-S(ISTP)