In Nd0.7Sr0.3MnO3 films, ranging in peak resistivity from 1000 Ohm . cm to less than or equal to 1 Ohm . cm, and exhibiting large magnetoresistance effects, the zero-field resistivity above the peak temperature T-p exhibits thermally activated behavior with an activation energy of 0.115+/-0.005 eV. At T well below T-p, the magnetoconductivity, rather than the magnetoresistance, is linear in B and this linear dependence is observed over a wide B range even when the magnetization is essentially saturated. A cross-over from the linear relation to sigma increasing as B-2 is observed near and above T-p. A tentative model is proposed.Physics, Condensed MatterSCI(E)26ARTICLE7599-6049
The co-existence of colossal positive and negative magnetoresistance has been observed in a perovski...
The magnetic field and temperature dependent anisotropic magnetoresistance (AMR) of the epitaxial gr...
Epitaxial thin films of the magnetic perovskite Pr0.5Sr0.5 MnO3 were prepared by dc-magnetron sputte...
A novel giant magnetoresistance memory effect has been observed in epitaxial Nd0.7Sr0.3MnOz thin fil...
Nd0.52Sr0.48MnO3 films of various thicknesses have been prepared by dc magnetron sputtering on singl...
The structure, electrical resistivity, and magnetoresistance of La0.67Sr0.33MnO3 heteroepitaxial fil...
Enhanced electric field (E) induced modulation of the resistance of epitaxial thin films of Nd0.7Sr0...
1/f noise of epitaxial Nd0.7Sr0.3MnO3 films, which show giant magnetoresistive effects, was measured...
The effect of film thickness on the colossal magnetoresistance in Pr0.7Sr0.3MnO3 films has been stud...
The resistivity and magnetoresistivity behavior of highly oriented La0.8Sr0.2MnO3 thin films have be...
10.1007/s00339-004-2895-4Applied Physics A: Materials Science and Processing7982103-2107APAM
In the present work we have studied the variation of LFMR as a function of the angle (θ) between the...
We report the first measurement of giant magnetoresistance at 10 GHz in a bulk ceramic sample of Nd0...
The impact of carrier localization on the anisotropic magnetoresistance (AMR) has been investigated ...
We report the temperature and magnetic field dependence of the resistivity of La2/3Sr1/3MnO3 thin f...
The co-existence of colossal positive and negative magnetoresistance has been observed in a perovski...
The magnetic field and temperature dependent anisotropic magnetoresistance (AMR) of the epitaxial gr...
Epitaxial thin films of the magnetic perovskite Pr0.5Sr0.5 MnO3 were prepared by dc-magnetron sputte...
A novel giant magnetoresistance memory effect has been observed in epitaxial Nd0.7Sr0.3MnOz thin fil...
Nd0.52Sr0.48MnO3 films of various thicknesses have been prepared by dc magnetron sputtering on singl...
The structure, electrical resistivity, and magnetoresistance of La0.67Sr0.33MnO3 heteroepitaxial fil...
Enhanced electric field (E) induced modulation of the resistance of epitaxial thin films of Nd0.7Sr0...
1/f noise of epitaxial Nd0.7Sr0.3MnO3 films, which show giant magnetoresistive effects, was measured...
The effect of film thickness on the colossal magnetoresistance in Pr0.7Sr0.3MnO3 films has been stud...
The resistivity and magnetoresistivity behavior of highly oriented La0.8Sr0.2MnO3 thin films have be...
10.1007/s00339-004-2895-4Applied Physics A: Materials Science and Processing7982103-2107APAM
In the present work we have studied the variation of LFMR as a function of the angle (θ) between the...
We report the first measurement of giant magnetoresistance at 10 GHz in a bulk ceramic sample of Nd0...
The impact of carrier localization on the anisotropic magnetoresistance (AMR) has been investigated ...
We report the temperature and magnetic field dependence of the resistivity of La2/3Sr1/3MnO3 thin f...
The co-existence of colossal positive and negative magnetoresistance has been observed in a perovski...
The magnetic field and temperature dependent anisotropic magnetoresistance (AMR) of the epitaxial gr...
Epitaxial thin films of the magnetic perovskite Pr0.5Sr0.5 MnO3 were prepared by dc-magnetron sputte...