The Emission of Rare Earth Complex Eu(asprin)3phen

将稀土配合物Eu(asprin)3phen掺杂到导电聚合物PVK中,制成结构分别为ITO/PVK:RE配合物/LiF/Al(1),ITO/PVK:RE配合物/PBD/LiF/Al(2)的电致发光(EL)器件.发现二者的电致发光谱存在着较大的差别:在器件(1)中,来自Eu3+的位于594 nm(5D0→7F1)和614 nm(5D0→7F2)处的发光强度大致相当,而在器件(2)中,EL主要来自Eu3+位于614 nm的发光,594 nm处的发光很弱,与薄膜状态下的光致发光谱(PL)一致.并针对此现象进行了初步讨论.Two kinds of electroluminescent devices were fabricated by doping the rare earth complex Eu (asprin)(3) phen into polymer PVK: (1) ITO/PVK:RE/LiF/Al; (2) ITO/PVK: RE/PBD/LiF/Al. A great difference in the EL spectrum was found between the two kinds of devices. In device (2) the intensity of 594 nm was rather weak compared with that of 614 nm. The spectrum was consistent with the photoluminescence (PL) spectrum under the state of thin film. But in device (1), the peak emission of 594 nm was comparable to that of 614 nm. Preliminary discuss on this phenomenon was made; in device (1), the recombination region was close to the metal cathode, effect of metal cathode on the electroluminescence of the rare earth complex caused the changes of the EL emission which was quite different from the TL emission. The phenomenon was not observed in device (2) whose recombination region was far from the cathode because an electron-transport layer was inserted.http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000182839300006&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701SCI(E)中文核心期刊要目总览(PKU)中国科技核心期刊(ISTIC)中国科学引文数据库(CSCD)52226-2282