Raman scattering and ferromagnetism of (Ga, Mn)N films grown by MOCVD

Yang, Xuelin
Wu, Jiejun
Chen, Zhitao
Pan, Yaobo
Zhang, Yan
Yang, Zhijian
Yu, Tongjun
Zhang, Guoyi

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Publication date

January 2007

DOI

10.1016/j.ssc.2007.05.012

Publisher

固体通讯

ISSN

0038-1098

Journal

issn:0038-1098

Citation count (estimate)

Abstract

In this letter, Raman spectra for a series of (Ga, Mn)N samples with different Mn concentration grown by MOCVD have been investigated. A new vibrational mode at 577 cm(-1) obtained is assigned to the local vibrational mode (LVM) of Mn substituting the Ga site. Another mode at 667 cm(-1) arises from vibrational mode of nitrogen vacancies-related defects. It is found that Mn doping increases the lattice disorder and other built-in defects such as the nitrogen vacancies. The room temperature ferromagnetism is not only dependent on the substitutional Mn content but also strongly related to these lattice disorder and negative defects in (Ga, Mn)N films. (c) 2007 Elsevier Ltd. All rights reserved.http://gateway.webofknowledge.com/gateway/Gateway....

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Raman scattering and ferromagnetism of (Ga, Mn)N films grown by MOCVD

Abstract

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Raman scattering and ferromagnetism of (Ga, Mn)N films grown by MOCVD

Abstract

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