In this paper, a new bulk silicon isolation structure with wafer-thick trenches is proposed for automotive (42 V) power-integrated-circuit applications. This technology provides the advantages of complete isolation with lower wafer cost and higher thermal-dissipation capability as compared with the silicon-on-insulator technology. Experimental results show that the new isolation structure can provide complete electrical isolation and with a 13% reduction in thermal resistance.Engineering, Electrical & ElectronicPhysics, AppliedSCI(E)EI1ARTICLE92144-21495
A novel technique to fabricate ultra deep high aspect ratio electrical isolation trenches with DRIE ...
In this letter, novel isolation structures are reported to improve the cross-talk isolation between ...
This paper describes a double polysilicon bipolar process incorporating a novel self-aligned emitter...
With the anticipation of increasing system demands, the need to integrate multiple functions (e.g. d...
With the anticipation of increasing system demands, the need to integrate multiple functions (e.g. d...
This paper reports an improved method of fabricating ultra deep (40-120??m) and high aspect ratio (m...
This paper reports an improved method of fabricating ultra deep (40-120 mu m) and high aspect ratio ...
Les caractéristiques de structures d'isolation LOCOS semi-enterré et LOCOS enterré ont été analysées...
A new insulated gate bipolar transistor structure, the 3D-IGBT, is presented. The 3D-IGBT utilizes s...
In this work the investigation on fully integrated systems providing on-chip galvanic isolation is p...
This paper reports a simple and effective crosstalk isolation structure for use in bulk CMOS power i...
Isolation and interconnection of microstructures are important for microelectrical-mechanical system...
Power Integrated Circuits (PICs), which combine one or more power devices with logic and control cir...
Bonding pads for RF/microwave integrated circuits on bulk silicon CMOS is designed with a simple dep...
This paper presents a novel technique to fabricate ultra deep high aspect ratio electrical isolation...
A novel technique to fabricate ultra deep high aspect ratio electrical isolation trenches with DRIE ...
In this letter, novel isolation structures are reported to improve the cross-talk isolation between ...
This paper describes a double polysilicon bipolar process incorporating a novel self-aligned emitter...
With the anticipation of increasing system demands, the need to integrate multiple functions (e.g. d...
With the anticipation of increasing system demands, the need to integrate multiple functions (e.g. d...
This paper reports an improved method of fabricating ultra deep (40-120??m) and high aspect ratio (m...
This paper reports an improved method of fabricating ultra deep (40-120 mu m) and high aspect ratio ...
Les caractéristiques de structures d'isolation LOCOS semi-enterré et LOCOS enterré ont été analysées...
A new insulated gate bipolar transistor structure, the 3D-IGBT, is presented. The 3D-IGBT utilizes s...
In this work the investigation on fully integrated systems providing on-chip galvanic isolation is p...
This paper reports a simple and effective crosstalk isolation structure for use in bulk CMOS power i...
Isolation and interconnection of microstructures are important for microelectrical-mechanical system...
Power Integrated Circuits (PICs), which combine one or more power devices with logic and control cir...
Bonding pads for RF/microwave integrated circuits on bulk silicon CMOS is designed with a simple dep...
This paper presents a novel technique to fabricate ultra deep high aspect ratio electrical isolation...
A novel technique to fabricate ultra deep high aspect ratio electrical isolation trenches with DRIE ...
In this letter, novel isolation structures are reported to improve the cross-talk isolation between ...
This paper describes a double polysilicon bipolar process incorporating a novel self-aligned emitter...