Add to ORKG用射频反应磁控溅射的方法在Si(100)衬底和Cu膜间制备Ta-Si-N(10nm)/Zr(20nm)双层结构的扩散阻挡层。Cu/Ta-Si-N/Zr/Si样品在高纯氮气的保护下从600至800℃退火1h。通过四探针电阻测试仪(FPP)、SEM、XRD和AES研究Cu/Ta-Si-N/Zr/Si系统在退火过程中的热稳定性。结果表明:沉积到Zr膜上的Ta-Si-N表面平坦,为典型的非晶态结构;Cu/Ta-Si-N/Zr/Si样品650℃以上退火后Zr原子扩散到Si中形成的ZrSi2能有效地降低Ta-Si-N与Si之间的接触电阻;Ta-Si-N/Zr阻挡层750℃退火后仍能有效地阻止Cu的扩散。Ta-Si-N(10 nm)/Zr(20 nm) bilayer diffusion barrier was prepared between n-type silicon(100) wafer and Cu film by radio frequency reactive magnetron sputtering. The Cu/Ta-Si-N/Zr/Si samples were subsequently annealed at different temperatures ranging from 600 to 800 degrees C in high-purity N(2) gas for 1 h. The thermal stability of the Cu/Ta-Si-N/Zr/Si system during annealing was investigated by X-ray diffraction(XRD), auger electron spectroscopy(...
Interfacial reactions between Cu and Si with different Ta-based diffusion barriers are investigated ...
[[abstract]]Sputtered Ta-Six nanostructure film was investigated as a barrier material for Cu metall...
The effects of substrate bias on the properties of Ta-Ni film as a diffusion barrier for copper meta...
Ta-Si-N(10 nm)/Zr(20 nm) bilayer diffusion barrier was prepared between n-type silicon(100) wafer an...
Ta-N (10 nm)/Zr (20 nm) film was grown on n-type (100) silicon wafer at various substrate temperatur...
The interfacial reactions of the Cu(100nm)/Ta(50nm)/Si structures and their relationship with the mi...
The reaction mechanisms in the Si/Ta/Cu metallization system and their relation to the microstructur...
a b s t r a c t One of the most important processes in Cu metallization for highly integrated circui...
The reactions in the Si/Ta/Cu metallization system produced by the sputtering process were investiga...
In the present study, 10 nm-thick TiVCrZrHf nitride films were developed as diffusion barrier materi...
The reaction mechanisms and related microstructures in the Si/TaC/Cu metallization system have been ...
We have studied sputter-deposited Ta, Ta36Si14, and Ta36Si14N50 thin films as diffusion barriers bet...
The reaction mechanisms and related microstructures in the Si/TaC/Cu metallization system have been ...
This dissertation presents a study of Ta-based Cu diffusion barrier for advanced semiconductor techn...
In the present study, 10 nm-thick TiVCrZrHf nitride films were developed as diffusion barrier materi...
Interfacial reactions between Cu and Si with different Ta-based diffusion barriers are investigated ...
[[abstract]]Sputtered Ta-Six nanostructure film was investigated as a barrier material for Cu metall...
The effects of substrate bias on the properties of Ta-Ni film as a diffusion barrier for copper meta...
Ta-Si-N(10 nm)/Zr(20 nm) bilayer diffusion barrier was prepared between n-type silicon(100) wafer an...
Ta-N (10 nm)/Zr (20 nm) film was grown on n-type (100) silicon wafer at various substrate temperatur...
The interfacial reactions of the Cu(100nm)/Ta(50nm)/Si structures and their relationship with the mi...
The reaction mechanisms in the Si/Ta/Cu metallization system and their relation to the microstructur...
a b s t r a c t One of the most important processes in Cu metallization for highly integrated circui...
The reactions in the Si/Ta/Cu metallization system produced by the sputtering process were investiga...
In the present study, 10 nm-thick TiVCrZrHf nitride films were developed as diffusion barrier materi...
The reaction mechanisms and related microstructures in the Si/TaC/Cu metallization system have been ...
We have studied sputter-deposited Ta, Ta36Si14, and Ta36Si14N50 thin films as diffusion barriers bet...
The reaction mechanisms and related microstructures in the Si/TaC/Cu metallization system have been ...
This dissertation presents a study of Ta-based Cu diffusion barrier for advanced semiconductor techn...
In the present study, 10 nm-thick TiVCrZrHf nitride films were developed as diffusion barrier materi...
Interfacial reactions between Cu and Si with different Ta-based diffusion barriers are investigated ...
[[abstract]]Sputtered Ta-Six nanostructure film was investigated as a barrier material for Cu metall...
The effects of substrate bias on the properties of Ta-Ni film as a diffusion barrier for copper meta...