Add to ORKG报导了利用北京大学串列静电加速器提供的重离子对两类静态随机存储器进行单粒子效应的实验和测量.给出了两类静态随机存储器的单粒子效应翻转截面随线性能量转移值的变化关系曲线.国防科技应用基础研究基金中文核心期刊要目总览(PKU)中国科学引文数据库(CSCD)01125-1281
静态随机存储器在反应堆中子辐射环境中会发生单粒子翻转(Single event upset, SEU).钨和铜等重金属作为局部互联,在半导体中已得到广泛应用,这些重金属对中子在半导体中的单粒子翻转截面...
The power consumption of Static Random Access Memory (SRAM) has become an important issue for modern...
The single-event upset (SEU) responses of 16 Kbit to 1 Mbit SRAMs irradiated with low and high-energ...
在广阔的能区内(从MeV到GeV)系统地研究了荷能离子轰击固态材料形成孤立损伤的形态及其形成机理.分别利用具有原子分辨能力的扫描隧道显微镜/扫描力显微镜观测了离子轰击导电和绝缘材料产生孤立损伤(或离子...
heavy ion beams from their 88-inch Cyclotron. The SRAM was shown to be immune to single event latchu...
Experimental methods are emphatically described for doing Single Event Effects (SEE) experiments on ...
The single event upset (SEU) imaging has been applied at the GSI heavy ion microprobe to determine t...
The single event upset (SEU) imaging has been applied at the GSI heavy ion microprobe to determine t...
The single event upset (SEU) imaging has been applied at the GSI heavy ion microprobe to determine t...
Silicon-on-insulator (SOI) technologies have been developed for radiation-hardened military and spac...
本工作推导了超导加速器在连续波模式时,在点电荷近似条件下,相对论束流负载与腔的相互作用过程的解析表达.同时对北京大学超导加速器平台(PKU-SCAF)的束流负载设计进行了初步分析.计算结果表明,当主加...
Static random access memory cells (SRAM) are high-speed semiconductor memory that uses flip-flop to...
A single particle generates a Single Event Upset(SEU) as well as dose effects in silicon devices. Th...
本文描述了重离子惯性聚变的研究现状和用于重离子惯性聚变的重离子加速器．The present researching status and the heavy ion accelerators use...
本课题从 CMOS SRAM 的单粒子效应机理出发，研究单粒子翻转和单粒子闩锁的检测 方法，建立了一个功能较为完善、操作简单的单粒子效应检测平台。它驱动被测 SRAM 在重离子辐照环境下工作，监测 S...
静态随机存储器在反应堆中子辐射环境中会发生单粒子翻转(Single event upset, SEU).钨和铜等重金属作为局部互联,在半导体中已得到广泛应用,这些重金属对中子在半导体中的单粒子翻转截面...
The power consumption of Static Random Access Memory (SRAM) has become an important issue for modern...
The single-event upset (SEU) responses of 16 Kbit to 1 Mbit SRAMs irradiated with low and high-energ...
在广阔的能区内(从MeV到GeV)系统地研究了荷能离子轰击固态材料形成孤立损伤的形态及其形成机理.分别利用具有原子分辨能力的扫描隧道显微镜/扫描力显微镜观测了离子轰击导电和绝缘材料产生孤立损伤(或离子...
heavy ion beams from their 88-inch Cyclotron. The SRAM was shown to be immune to single event latchu...
Experimental methods are emphatically described for doing Single Event Effects (SEE) experiments on ...
The single event upset (SEU) imaging has been applied at the GSI heavy ion microprobe to determine t...
The single event upset (SEU) imaging has been applied at the GSI heavy ion microprobe to determine t...
The single event upset (SEU) imaging has been applied at the GSI heavy ion microprobe to determine t...
Silicon-on-insulator (SOI) technologies have been developed for radiation-hardened military and spac...
本工作推导了超导加速器在连续波模式时,在点电荷近似条件下,相对论束流负载与腔的相互作用过程的解析表达.同时对北京大学超导加速器平台(PKU-SCAF)的束流负载设计进行了初步分析.计算结果表明,当主加...
Static random access memory cells (SRAM) are high-speed semiconductor memory that uses flip-flop to...
A single particle generates a Single Event Upset(SEU) as well as dose effects in silicon devices. Th...
本文描述了重离子惯性聚变的研究现状和用于重离子惯性聚变的重离子加速器．The present researching status and the heavy ion accelerators use...
本课题从 CMOS SRAM 的单粒子效应机理出发，研究单粒子翻转和单粒子闩锁的检测 方法，建立了一个功能较为完善、操作简单的单粒子效应检测平台。它驱动被测 SRAM 在重离子辐照环境下工作，监测 S...
静态随机存储器在反应堆中子辐射环境中会发生单粒子翻转(Single event upset, SEU).钨和铜等重金属作为局部互联,在半导体中已得到广泛应用,这些重金属对中子在半导体中的单粒子翻转截面...
The power consumption of Static Random Access Memory (SRAM) has become an important issue for modern...
The single-event upset (SEU) responses of 16 Kbit to 1 Mbit SRAMs irradiated with low and high-energ...