Coexistence of Bulk and Surface Shubnikov-de Haas Oscillations in Bi2Se3

Qu, Fanming
Zhang, Chi
Du, Rui-Rui
Lu, Li

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Publication date

January 2013

DOI

10.1007/s10909-012-0702-8

Publisher

journal of low temperature physics

Journal

issn:0022-2291

Abstract

Our Hall bar shape device based on Bi2Se3 nano-plate was fabricated and studied at a dilution temperature with a tilted magnetic field up to 45 Tesla. It is found that, three types of carriers, one of three-dimensional (3D) and two of two-dimensional (2D), were identified by analyzing the angular dependence of Shubnikov-de Haas (SdH) oscillations, which confirmed the coexistence of bulk carriers and band bending induced two-dimensional electron gas in our transport experiment. The co-contributions to quantum oscillations indicated the independence of these states, without smearing out by scattering between each other, which may lay the foundations for detecting topological surface states (TSS) with residual bulk carriers in Bi2Se3.http://ga...