The effect of hydrogen passivation on electrical characteristics of double-polysilicon self-aligned bipolar transistors
- Sanden, M
- Karlin, TE
- Ma, P
- Grahn, JV
- Zhang, SL
- Ostling, M
DOIAbstract
The influence of hydrogen passivation using forming gas annealing (FGA), on the electrical performance of double-polysilicon self-aligned bipolar junction transistors was investigated. While the collector current remained essentially unaffected after FGA, the base current decreased substantially. As a result, the peak DC current gain increased by a factor of three. Identification of the Various base current components showed that the SiO2/monosilicon interface area along the perimeter of the emitter window, were effectively passivated after FGA, both in the quasi-neutral base and in the space charge region. The FGA treatment was also found to lead to an increase in the peak cut-off frequency by up to 40%. This is explained by a decrease in ...
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