Influences of thicknesses of SiO2 layers on electroluminescence from amorphous Si/SiO2 superlattices

Amorphous Si/SiO2 superlattices, with four periods, have been grown using the two-target alternation magnetron sputtering technique. The thicknesses of Si layers in all the superlattices are 1.0 nm, and those of SiO2 layers in six types of the superlattices are 1.0, 1.5, 2.0, 2.5, 3.0, and 3.5 nm. Electroluminescence (EL) from the Au/(Si/SiO2) superlattice/p-Si samples has been observed at a forward bias about 5 V or larger. The influences on the EL spectra from the thicknesses of SiO2 layers in the amorphous Si/SiO2 superlattices and from input electrical power are studied systematically. (C) 1999 Elsevier Science B.V. All rights reserved.Physics, Condensed MatterSCI(E)EI3ARTICLE1-2104-10927