DOIAbstract
研究了在软击穿后MOS晶体管特性的退化.在晶体管上加均匀的电压应力直到软击穿发生的过程中监控晶体管的参数.在软击穿后,输出特性和转移特性只有小的改变.在软击穿发生时,漏端的电流和域值电压的退化是连续变化的.但是,在软击穿时栅漏电流突然有大量的增加.对软击穿后的栅漏电流增量的分析表明,软击穿后的电流机制是FN隧穿,这是软击穿引起的氧化物的势垒高度降低造成的.The degradation of MOS transistor operation due to soft breakdown of the gate oxide is studied.Important transistor parameters are monitored under homogeneous stress at different temperature until the soft breakdown occurred.The output and transfer characteristic have small change after soft breakdown as the degradations of drain current and threshold voltage is continuous.However,the increment of gate leakage current increases abruptly after the soft breakdown.The analysis to the increment of gate leakage current after the soft breakdown shows mechanism of similar...
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