Reversible resistive switching of Gd-doped TiO2 thin films for nonvolatile memory applications
- Liu, L.F.
- Tang, H.
- Wang, Y.
- Wang, W.
- Tian, D.Y.
- Liu, X.Y.
- Zhang, X.
- Han, R.Q.
- Kang, J.F.
Publication date
January 2007
DOIAbstract
Gd doped TiO2 polycrystalline thin film was prepared on Pt/Ti/SiO2/Si substrates by sol-gel method. Nonvolatile and reversible bistable resistance states were demonstrated for the first time. Excellent reversible resistive switching characteristics with 0.6??0.1V reset bias and 2.0??0.1V set bias and a resistance difference by over three orders of magnitude were achieved in 3%Gd doped TiO2 polycrystalline thin films. ? 2006 IEEE.EI
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