Low voltage stress induced substrate current as a monitor for interface states generation in ultra-thin oxide n-MOSFETs

In this paper, the low voltage stress induced substrate leakage current (Ib) was studied based on generation kinetics and using it as a monitor of interface states (Nit) generation for ultra-thin oxide MOSFETs after periodical stress interruptions. It is found the low voltage Ib is formed by electrons tunnel through interface states, and its variations ??Ib are proportion to Nit variations (??Nit). The Nit energy distributions were determined by substrate leakage current variations. The obtained results were compared with that measured by Gate Diode techniques. ? 2006 IEEE.EI