Fabrication and Characteristics of ZnO-based Thin Film Transistors
- Han, Dedong
- Wang, Yi
- Zhang, Shengdong
- Sun, Lei
- Kang, Jinfeng
- Liu, Xiaoyan
- Du, Gang
- Liu, Lifeng
- Han, Ruqi
DOIAbstract
ZnO-based thin-film transistors (TFT) have been fabricated on p-Si (100) substrates by radio frequency (rf) magnetron sputtering at room temperature with a bottom gate configuration. The XRD and SEM show that ZnO films had high crystalline quality. The ZnO films present an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The electrical properties of ZnO-based TFTs were investigated by I(D)-V(D) and I(D)-V(G) measurements. The ZnO TFT operates in the enhancement mode with a channel mobility of 6.86 cm(2)/V.s. The combination of transparency, high channel mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of ...
Add to ORKG