Morphologies of one-dimensional GaN nanostructures grown through technology

GaN nanoribbons, nanowires and nanorods were synthesized on sapphire, quartz and silicon substrates through a novel two-step growth technology. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) and transmission electron microscopy (TEM) were used to characterize the samples. SEM images revealed the morphologies of the as-synthesized one-dimensional nanostructures included twisted nanoribbons, straight and short nanorods. The structure characterization confirmed all the grown one-dimensional materials are hexagonal wurtzite GaN. (c) 2005 Elsevier B.V. All rights reserved.http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000230627400006&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701Nanoscience & NanotechnologyPhysics, Condensed MatterSCI(E)EI0ARTICLE3237-2412