Feasible approach to the fabrication of asymmetric Schottky barrier MOSFETs by using the spacer technique

Sun, L
Li, DY
Liu, XY
Han, RQ

Open link

Publication date

January 2006

DOI

10.1016/j.mejo.2005.05.012

Publisher

microelectronics journal

ISSN

0026-2692

Journal

issn:0026-2692

Citation count (estimate)

Abstract

The spacer technique is proposed for the fabrication of the Asymmetric Schottky Barrier MOSFETs (ASB-MOSFET). The characteristics of the 45 nun and the 20 nun n-channel ASB-MOSFETs, which adopt a Schottky barrier height of 0.9 eV at source and that of 0.2 eV at drain, have been simulated and discussed by the comparisons with the conventional Schottky Barrier MOSFETs (SB-MOSFET). With a higher lon/1off ratio, the ASB-MOSFET structure has shown a better performance than the conventional SB-MOSFETs. (c) 2005 Elsevier Ltd. All rights reserved.http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000236070300010&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a607...

Extracted data

We use cookies to provide a better user experience.

Data Protection

Feasible approach to the fabrication of asymmetric Schottky barrier MOSFETs by using the spacer technique

Abstract

Extracted data

Feasible approach to the fabrication of asymmetric Schottky barrier MOSFETs by using the spacer technique

Abstract

Extracted data

Related items

Related items