An explicit carrier-based compact model for nanowire surrounding-gate MOSFET simulation

An explicit carrier-based compact model for the nanowire surrounding-gate (SRG) Metal-oxide-Semiconductor Field Effect Transistor (MOSFET) simulation is presented in this paper in the formulation of an accurate yet analytic approximate solution of the carrier concentration. It is shown that the analytic approximation solution of the carrier concentration has been derived from a simplified Taylor expansion of the exact solution of the Poisson's equation of the SRG MOSFETs, instead to resorting to the Newton-Raphson numerical iterative calculation. This analytic approximation also gives accurate dependences of the carrier concentration on the geometry structures and the bias, compared with the Newton-Raphson numerical results. Further, the obtained analytic approximation solution is combined with the Pao-Pah current formulation to get an explicit physics based current-voltage model of the SRG MOSFETs, and the model predictions also show in a good agreement with the result of the Newton-Raphson iterative.Chemistry, PhysicalPhysics, Atomic, Molecular & ChemicalSCI(E)EI2ARTICLE181-873