The defect band structure and properties of postbreakdown SiO(2) have been investigated by the variation method of Harrison. The breakdown path of SiO(2) can be considered as a one-dimensional linear chain of defects between electrodes. The first soft breakdown occurs when the ratio of the distance between defects to the defect radius locally reaches a critical value of about 8, and hard breakdown occurs when the ratio is about 3.4. The ratio and the Weibull slope are recisymmetrical. Thus, the type and properties of oxide breakdown paths can be determined and analyzed when the Weibull slope is known. (c) 2008 American Institute of Physics.http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&...
International audienceIn this study, we have investigated the electrical properties of the failure m...
In order to understand the degradation of the electrical operations of metal-oxide-semiconductor (MO...
The experimentally determined conduction mechanisms of gate leakage current are examined for two dif...
Defect current of ultrathin oxides after degradation and breakdown was investigated by defect band s...
Defect current of ultrathin oxides after degradation and breakdown was investigated by defect band s...
In this letter, the relationship between gate oxide degradation and defect band formation is investi...
The physical origin of post soft breakdown (SBD) current saturation behavior of ultrathin gate oxide...
Multiple conduction states in ultra-thin SiO 2 films after hard breakdown could be observed when the...
Ramped-current and ramped-voltage current-voltage (I-V) measurements were carried out to investigate...
[[abstract]]This paper investigated the degradation and breakdown characteristics of an ultrathin si...
The post soft breakdown (SBD) current saturation behavior was studied on the basis of electron veloc...
Switching between well defined states of post-breakdown conduction in ultra-thin SiO 2 films is obse...
Abstract—The microelectronics industry owes its considerable success largely to the existence of the...
Electronic structures of oxygen deficiency in the SiO_2 thin film are theoretically studied by using...
The ramped-field technique has been widely used for determining dielectric breakdown in thin insulat...
International audienceIn this study, we have investigated the electrical properties of the failure m...
In order to understand the degradation of the electrical operations of metal-oxide-semiconductor (MO...
The experimentally determined conduction mechanisms of gate leakage current are examined for two dif...
Defect current of ultrathin oxides after degradation and breakdown was investigated by defect band s...
Defect current of ultrathin oxides after degradation and breakdown was investigated by defect band s...
In this letter, the relationship between gate oxide degradation and defect band formation is investi...
The physical origin of post soft breakdown (SBD) current saturation behavior of ultrathin gate oxide...
Multiple conduction states in ultra-thin SiO 2 films after hard breakdown could be observed when the...
Ramped-current and ramped-voltage current-voltage (I-V) measurements were carried out to investigate...
[[abstract]]This paper investigated the degradation and breakdown characteristics of an ultrathin si...
The post soft breakdown (SBD) current saturation behavior was studied on the basis of electron veloc...
Switching between well defined states of post-breakdown conduction in ultra-thin SiO 2 films is obse...
Abstract—The microelectronics industry owes its considerable success largely to the existence of the...
Electronic structures of oxygen deficiency in the SiO_2 thin film are theoretically studied by using...
The ramped-field technique has been widely used for determining dielectric breakdown in thin insulat...
International audienceIn this study, we have investigated the electrical properties of the failure m...
In order to understand the degradation of the electrical operations of metal-oxide-semiconductor (MO...
The experimentally determined conduction mechanisms of gate leakage current are examined for two dif...